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PJC7472B fiches techniques PDF

Pan Jit International - 60V N-Channel Enhancement Mode MOSFET

Numéro de référence PJC7472B
Description 60V N-Channel Enhancement Mode MOSFET
Fabricant Pan Jit International 
Logo Pan Jit International 





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PJC7472B fiche technique
PPJC7472B
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 250mA
Features
RDS(ON) , VGS@10V, ID@600mA<3
RDS(ON) , [email protected], ID@200mA<4
Advanced Trench Process Technology
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00018 ounces, 0.005 grams
Marking: C2B
SOT-323
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
60
+30
250
1000
350
4
-55~150
357
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
June 12,2015-REV.00
Page 1

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