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Numéro de référence | PJE8472B | ||
Description | 60V N-Channel Enhancement Mode MOSFET | ||
Fabricant | Pan Jit International | ||
Logo | |||
1 Page
PPJE8472B
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 200mA
Features
RDS(ON) , VGS@10V, ID@600mA<3Ω
Advanced Trench Process Technology
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
SOT-523
Mechanical Data
Case : SOT-523 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.00007 ounces, 0.002 grams
Marking : E2B
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
60
+30
200
800
300
4
-55~150
417
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
June 12,2015-REV.00
Page 1
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Pages | Pages 6 | ||
Télécharger | [ PJE8472B ] |
No | Description détaillée | Fabricant |
PJE8472B | 60V N-Channel Enhancement Mode MOSFET | Pan Jit International |
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