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Numéro de référence | PJS6414 | ||
Description | 20V N-Channel Enhancement Mode MOSFET | ||
Fabricant | Pan Jit International | ||
Logo | |||
1 Page
PPJS6414
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
6.6A
Features
RDS(ON) , VGS@4.5V, ID@6.6A<36mΩ
RDS(ON) , VGS@2.5V, ID@4.1A<52mΩ
RDS(ON) , VGS@1.8V, ID@1.9A<92mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc..
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: S14
SOT-23 6L-1
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
20
+12
6.6
26.4
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
December 31,2014-REV.02
Page 1
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Pages | Pages 6 | ||
Télécharger | [ PJS6414 ] |
No | Description détaillée | Fabricant |
PJS6414 | 20V N-Channel Enhancement Mode MOSFET | Pan Jit International |
PJS6415AE | P-Channel Enhancement Mode MOSFET | Pan Jit International |
PJS6416 | 20V N-Channel Enhancement Mode MOSFET | Pan Jit International |
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