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Numéro de référence | PJS6832 | ||
Description | 30V N-Channel Enhancement Mode MOSFET | ||
Fabricant | Pan Jit International | ||
Logo | |||
1 Page
PPJS6832
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V
Current
1.6A
SOT-23 6L
Features
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.0141 grams
Marking: SG2
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+8
1.6
6.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
January 22,2015-REV.02
Page 1
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Pages | Pages 6 | ||
Télécharger | [ PJS6832 ] |
No | Description détaillée | Fabricant |
PJS6832 | 30V N-Channel Enhancement Mode MOSFET | Pan Jit International |
PJS6833 | 30V P-Channel Enhancement Mode MOSFET | Pan Jit International |
PJS6834 | 20V N-Channel Enhancement Mode MOSFET | Pan Jit International |
PJS6835 | 20V P-Channel Enhancement Mode MOSFET | Pan Jit International |
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