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PJT7413 fiches techniques PDF

Pan Jit International - 20V P-Channel Enhancement Mode MOSFET

Numéro de référence PJT7413
Description 20V P-Channel Enhancement Mode MOSFET
Fabricant Pan Jit International 
Logo Pan Jit International 





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PJT7413 fiche technique
PPJT7413
20V P-Channel Enhancement Mode MOSFET ESD Protected
Voltage
-20 V Current
-2.5A
SOT-363-1
Features
RDS(ON) , [email protected], [email protected]<115m
RDS(ON) , [email protected], [email protected]<150m
RDS(ON) , [email protected], [email protected]<250m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-363-1 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00028 ounces, 0.00794 grams
Marking: T13
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+12
-2.5
-10
750
6
-55~150
167
UNITS
V
V
A
A
mW
mW/ oC
oC
oC/W
January 27,2015-REV.01
Page 1

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