|
|
PDF PSMN3R4-30BL Data sheet ( Hoja de datos )
| Número de pieza | PSMN3R4-30BL | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PSMN3R4-30BL (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
|
No Preview Available !
PSMN3R4-30BL
N-channel 30 V 3.3 mΩ logic level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
[1]
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
VGS = 4.5 V; ID = 25 A; VDS = 15 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω;
unclamped
Min
-
-
-
-55
-
-
-
-
-
[1] Continuous current is limited by package.
Typ Max Unit
- 30 V
- 100 A
- 114 W
- 175 °C
3.91 4.6
2.79 3.3
mΩ
mΩ
8-
31 -
nC
nC
- 200 mJ
1 page  
NXP Semiconductors
PSMN3R4-30BL
N-channel 30 V 3.3 mΩ logic level MOSFET in D2PAK
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to see Figure 4
mounting base
thermal resistance from junction to Minimum foot print; mounted on a
ambient
printed circuit board
Min Typ Max Unit
-
0.65 1
K/W
- 50 - K/W
1
Zth(j-mb) δ = 0.5
(K/W)
0.2
10-1 0.1
0.05
0.02
10-2
003aad007
10-3
single shot
P δ = tp
T
10-4
10-6
10-5
10-4
10-3
10-2
tp
T
10-1 tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
PSMN3R4-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
PSMN3R4-30BL
N-channel 30 V 3.3 mΩ logic level MOSFET in D2PAK
8. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
D1
D
HD
E
2
13
ee
b
A
A1
mounting
base
Lp
c
Q
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
c
D
max.
D1
mm 4.50 1.40 0.85 0.64 11 1.60
4.10 1.27 0.60 0.46
1.20
E
10.30
9.70
e
2.54
Lp HD Q
2.90 15.80 2.60
2.10 14.80 2.20
OUTLINE
VERSION
SOT404
IEC
REFERENCES
JEDEC
JEITA
Fig 18. Package outline SOT404 (D2PAK)
EUROPEAN
PROJECTION
ISSUE DATE
05-02-11
06-03-16
PSMN3R4-30BL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
11 of 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PSMN3R4-30BL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PSMN3R4-30BL | MOSFET ( Transistor ) | NXP Semiconductors |
| PSMN3R4-30BLE | MOSFET ( Transistor ) | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |