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PDF RU6581R Data sheet ( Hoja de datos )
| Número de pieza | RU6581R | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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RU6581R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 65V/81A,
RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-220
Applications
• Switching Application Systems
• UPS
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
65
±25
175
-55 to 175
①
81
②
324
①
81
58
111
56
1.35
182
Unit
V
°C
°C
A
A
A
W
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU6581R
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2012
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU6581R.PDF ] | |
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