|
|
PDF RU75210R Data sheet ( Hoja de datos )
| Número de pieza | RU75210R | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RU75210R (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
RU75210R
N-Channel Advanced Power MOSFET
Features
• 75V/210A,
RDS (ON) =3.5mΩ(Typ.)@VGS=10V
• Reliable and Rugged
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• High Speed Power Switching
• High Efficiency Synchronous in SMPS
• Automotive applications and a wide variety of other applications
GDS
TO220
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
75
±25
175
-55 to 175
210
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
840 A
210
A
148
375
W
188
0.4 °C/W
62.5
°C/W
900 mJ
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2014
1
www.ruichips.com
1 page  
RU75210R
Typical Characteristics
Output Characteristics
300
250 Vgs=8,9,10V
200 6V
150
5V
100
50 3V
0
0.0
0.5 1.0 1.5 2.0
VDS - Drain-Source Voltage (V)
2.5
Drain-Source On Resistance
2.5
VGS=10V
ID=75A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=3.5mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
10000
9000
Frequency=1.0MHz
8000
7000
6000
Ciss
5000
4000
3000
2000
Coss
1000
0
Crs
s
1
10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2014
5
Drain-Source On Resistance
10
8
6
4 VGS=10V
2
0
0
100
10
20 40 60 80
ID - Drain Current (A)
100
Source-Drain Diode Forward
TJ=175°C
TJ=25°C
1
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
Gate Charge
10
9 VDS=60V
8 IDS=75A
7
6
5
4
3
2
1
0
0 20 40 60 80
QG - Gate Charge (nC)
100
www.ruichips.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RU75210R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RU75210R | N-Channel Advanced Power MOSFET | Ruichips |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |