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RUS1Z20R2 fiches techniques PDF

Ruichips - Power Schottky Barrier Diode

Numéro de référence RUS1Z20R2
Description Power Schottky Barrier Diode
Fabricant Ruichips 
Logo Ruichips 





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RUS1Z20R2 fiche technique
Features
VRRM= 150V
IF(AV)=2x 10A
• Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
• Low Forward Voltage Drop
• Lead Free and Green Devices Available
Applications
• Rectifiers in SMPS
• Free Wheeling Diode
• DC-DC Converters
RUS1Z20R2
Power Schottky Barrier Diode
Pin Description
TO220
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VRRM
VR
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
IF(AV)
per Device
Average Rectified Forward Current, TC=130°C
per Diode
IFSM
TSTG
TJ
Peak Forward Surge Current,8.3ms Half Sine Wave
Storage Temperature Range
Operating Junction Temperature
Mounted on Large Heat Sink
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Schottky Barrier Diode
Rating
Unit
150
150
20
10
150
-55 to 150
150
V
V
A
A
A
°C
°C
1.5 °C/W
62.5 °C/W
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2013
1
www.ruichips.com

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