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PDF SQM100N10-10 Data sheet ( Hoja de datos )
| Número de pieza | SQM100N10-10 | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SQM100N10-10
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-263
100
0.0105
0.0120
100
Single
D
FEATURES
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
G DS
Top View
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-263
SQM100N10-10-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
VGS
ID
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
100
± 20
100
70
100
400
75
280
375
125
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S12-1845-Rev. B, 30-Jul-12
1
Document Number: 67027
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
SQM100N10-10
Vishay Siliconix
Limited by RDS(on)*
100
ID
Limited
10
100 µs
1 ms
10 ms, 100 ms, 1 s, 10 s, DC
1
TC = 25 °C
Single Pulse
BVDSS Limited
0.1
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10 100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
S12-1845-Rev. B, 30-Jul-12
5
Document Number: 67027
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SQM100N10-10.PDF ] | |
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