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PDF SQS405ENW Data sheet ( Hoja de datos )
| Número de pieza | SQS405ENW | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQS405ENW
Vishay Siliconix
Automotive P-Channel 12 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -4.5 V
RDS(on) (Ω) at VGS = -2.5 V
ID (A)
Configuration
-12
0.020
0.026
-16
Single
PowerPAK® 1212-8 Single
D
D8
D7
D6
5
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Wettable flank terminals
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
3.3 mm
1
Top View
3.3 mm
Marking Code: Q022
1
2S
3S
4S
G
Bottom View
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK 1212-8
SQS405ENW-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-12
±8
-16
-16
-16
-64
-19
18
39
13
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
RthJA
RthJC
81
3.8
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
UNIT
°C/W
S15-0545-Rev. A, 18-Mar-15
1
Document Number: 62984
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100 ID Limited
Limited by RDS(on)*
10
1
IDM Limited
1 ms
10 ms
100 ms, 1 s,
10 s, DC
SQS405ENW
Vishay Siliconix
0.1 BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
Single Pulse
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA (t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
S15-0545-Rev. A, 18-Mar-15
5
Document Number: 62984
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SQS405ENW.PDF ] | |
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