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PDF SQ7415AENW Data sheet ( Hoja de datos )
| Número de pieza | SQ7415AENW | |
| Descripción | Automotive P-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ7415AENW
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -10 V
RDS(on) (Ω) at VGS = -4.5 V
ID (A)
Configuration
Package
-60
0.065
0.090
-16
Single
PowerPAK 1212-8W
PowerPAK® 1212-8W Single
D
D
D
6
D
7
8
5
FEATURES
• TrenchFET® power MOSFET
• Low thermal resistance PowerPAK® 1212-8W
package with 1.07 mm profile
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
G
3.3 mm
1
Top View
3.3 mm
1
4
3
S
2
S
S
G
Bottom View
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-60
± 20
-16
-11
-16
-64
-23
26
53
17
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
RthJA
RthJC
81
2.8
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
UNIT
°C/W
S15-2138, Rev. A, 14-Sep-15
1
Document Number: 76598
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
SQ7415AENW
Vishay Siliconix
100 IDM Limited
ID Limited
10
1
Limited by RDS(on)*
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
100 μs
1 ms
10 ms
100 ms, 1 s,10 s, DC
0.01
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2138, Rev. A, 14-Sep-15
5
Document Number: 76598
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SQ7415AENW.PDF ] | |
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