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Toshiba Semiconductor - VARIABLE CAPACITANCE DIODE (VCO FOR UH BAND RADIO)

Numéro de référence 1SV277
Description VARIABLE CAPACITANCE DIODE (VCO FOR UH BAND RADIO)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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1SV277 fiche technique
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV277
1SV277
VCO for UHF Band Radio
High capacitance ratio: C1 V/C4 V = 2.3 (typ.)
Low series resistance: rs = 0.42 (typ.)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
VR 10 V
Tj 125 °C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C1 V
C4 V
C1 V/C4 V
rs
IR = 1 μA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
VR = 1 V, f = 470 MHz
Marking
Min Typ. Max Unit
10 ⎯ ⎯
⎯⎯
3
4.0 4.5 4.9
1.85 2.0 2.35
2.0 2.3
0.42 0.55
V
nA
pF
pF
Ω
1 2007-11-01

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