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Toshiba Semiconductor - VARIABLE CAPACITANCE DIODE (UHF SHF TUNING)

Numéro de référence 1SV291
Description VARIABLE CAPACITANCE DIODE (UHF SHF TUNING)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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1SV291 fiche technique
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV291
UHF SHF Tuning
· High capacitance ratio: C2 V/C25 V = 7.6 (typ.)
· Low series resistance: rs = 1.9 (typ.)
· Excellent C-V characteristics, and small tracking error.
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
VRM
Tj
Tstg
Rating
30
35 (RL = 10 kW)
125
-55~125
Unit
V
V
°C
°C
1SV291
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
VR
IR
C2 V
C25 V
C2 V/C25 V
rs
IR = 1 mA
VR = 28 V
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
¾
VR = 1 V, f = 470 MHz
Note: Available in matched group for capacitance to 6%.
C (max) - C (min)
C (min)
=< 0.06
(VR = 2~25 V)
Marking
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
30 ¾ ¾
V
¾ ¾ 10 nA
4.2 ¾ 5.7 pF
0.53 ¾ 0.68 pF
7.3 ¾ ¾ ¾
¾ 1.9 2.3 W
1 2003-03-24

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