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PDF IRFP4137PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFP4137PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
G
D
S
IRFP4137PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
300V
56m
69m
38A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
S
D
G
TO-247AC
D
Drain
S
Source
Base part number Package Type
IRFP4137PbF
TO-247AC
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRFP4137PbF
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
Thermal Resistance
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Max.
38
27
152
341
2.3
± 20
8.9
-55 to + 175
300
10 lbf·in (1.1 N·m)
Units
A
W
W/°C
V
V/ns
°C
541
Typ.
–––
0.24
–––
Max.
0.44
–––
40
mJ
Units
°C/W
1 www.irf.com © 2012 International Rectifier
October 30, 2012
1 page  
IRFP4137PbF
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
IF = 16A
VR = 255V
40 TJ = 25°C
TJ = 125°C
60
IF = 24A
50
VR = 255V
TJ = 25°C
TJ = 125°C
40
30
30
20
20
10
0
200 400 600 800 1000
diF /dt (A/µs)
Fig 14. Typical Recovery Current vs. dif/dt
3500
3000
2500
IF = 16A
VR = 255V
TJ = 25°C
TJ = 125°C
2000
1500
1000
0
200 400 600 800 1000
diF /dt (A/µs)
Fig 16. Typical Stored Charge vs. dif/dt
5 www.irf.com © 2012 International Rectifier
10
0
200 400 600 800 1000
diF /dt (A/µs)
Fig 15. Typical Recovery Current vs. dif/dt
5000
4500
4000
3500
IF = 24A
VR = 255V
TJ = 25°C
TJ = 125°C
3000
2500
2000
1500
1000
0
200 400 600 800 1000
diF /dt (A/µs)
Fig 17. Typical Stored Charge vs. dif/dt
October 30, 2012
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP4137PBF.PDF ] | |
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