DataSheet.es    


PDF IRFP4710PBF Data sheet ( Hoja de datos )

Número de pieza IRFP4710PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRFP4710PBF (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! IRFP4710PBF Hoja de datos, Descripción, Manual

PD - 95055
IRFP4710PbF
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterruptible Power Supplies
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
0.014
ID
72A
TO-247AC
Max.
72
51
300
190
1.2
± 20
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Notes  through … are on page 8
www.irf.com
Typ.
–––
0.24
–––
Max.
0.81
–––
40
Units
°C/W
1
2/26/04

1 page




IRFP4710PBF pdf
IRFP4710PbF
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC
+TC
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet IRFP4710PBF.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRFP4710PBFPower MOSFET ( Transistor )International Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar