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IRFP4868PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFP4868PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFP4868PBF fiche technique
  IRFP4868PbF
VDSS
RDS(on) typ.
max.
ID
300V
25.5m
32m
70A
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Base Part Number
 
IRFP4868PbF
Package Type
 
TO-247AC
 
G
Gate
 D
D
Drain
S
D
G
TO-247AC
S
Source
Standard Pack
Form
Tube
Quantity
25
Orderable Part Number
 
IRFP4868PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
RJC
RCS
RJA
Symbol
Parameter
Junction-to-Case 
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
  
Max.
70
49
280
517
3.4
± 20
-55 to + 175
300
10lbfin (1.1Nm)
  
1093
See Fig. 14, 15, 22a, 22b
 
Typ.
–––
0.24
–––
 
Max.
0.29
–––
40
 
Units
A
W
W/°C
V
°C
 
mJ
A
mJ
 
Units
°C/W
1 www.irf.com © 2012 International Rectifier
October 30, 2012

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