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Numéro de référence | IRFP7530PBF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
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1 Page
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRFP7530PbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
1.65m
G
max
2.00m
ID (Silicon Limited)
281A
S
ID (Package Limited)
195A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
G DS
TO-247
IRFP7530PbF
D
Drain
S
Source
Base part number Package Type
IRFP7530PbF
TO-247
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRFP7530PbF
7
ID = 100A
6
5
4
TJ = 125°C
3
2 TJ = 25°C
1
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
300
250 Limited by package
200
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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November 7, 2014
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Pages | Pages 10 | ||
Télécharger | [ IRFP7530PBF ] |
No | Description détaillée | Fabricant |
IRFP7530PBF | Power MOSFET ( Transistor ) | International Rectifier |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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