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PDF 1PT Data sheet ( Hoja de datos )
| Número de pieza | 1PT | |
| Descripción | Sensitive gate SCRs | |
| Fabricantes | nELL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1PT (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SEMICONDUCTOR
1PT Series RRooHHSS
Sensitive gate SCRs, 1A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
DESCRIPTION
Value
1
600 to 800
10 to 200
Unit
A
V
µA
Thanks to highly sensitive triggering levels, the 1PT
series is suitable for all applications where the available
gate current is limited, such as capacitive discharge
ignitions, motor control in kitchen aids, overvoltage
crowbar protection in low power supplies among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
TO-92
(1PTxxE)
A
G
K
3(A)
2(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Forward peak gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
SYMBOL
IT(RMS)
TEST CONDITIONS
Tc =85ºC
VALUE
1
UNIT
A
IT(AV)
ITSM
I2t
dI/dt
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tj
Tc =85ºC
F =50 Hz
F =60 Hz
t = 20 ms
t = 16.7 ms
tp = 10 ms
F = 60 Hz
Tj = 110ºC
Tp = 20 µs
Tj = 110ºC
TA=25°C, Pulse width≤0.1µs
Tj =110ºC
Tj =25ºC
0.6
12
13
0.72
50
0.5
0.5
0.1
600 and 800
- 40 to + 150
- 40 to + 110
A
A
A2s
A/µs
A
W
W
V
ºC
www.nellsemi.com
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| PDF Descargar | [ Datasheet 1PT.PDF ] | |
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