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PDF 4PT Data sheet ( Hoja de datos )
| Número de pieza | 4PT | |
| Descripción | Sensitive gate SCRs | |
| Fabricantes | nELL | |
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Hay una vista previa y un enlace de descarga de 4PT (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SEMICONDUCTOR
4PT Series RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
4
600 to 800
10 to 200
Unit
A
V
µA
A
K
A
G
TO-251 (I-PAK)
(4PTxxF)
A
A
K
G
TO-252 (D-PAK)
(4PTxxG)
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the
available gate current is limited, such as motor
control for hand tools, kitchen aids, capacitive
discharge ignitions, overvoltage crowbar protection
for low power supplies among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
A
KAG
TO-220AB (Non-lnsulated)
(4PTxxA)
KA
G
TO-126 (Non-lnsulated)
(4PTxxAM)
KAG
TO-220AB (lnsulated)
(4PTxxAI)
K AG
TO-202-3
(4PTxxAT)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
IT(RMS)
IT(AV)
ITSM
I2t
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-126
TO-202-3
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-126
TO-202-3
F =50 Hz
F =60 Hz
tp = 10 ms
Tc=115°C
Tc=110°C
Tc=95°C
Tc=60°C
Tc=115°C
Tc=110°C
Tc=95°C
Tc=60°C
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Average gate power dissipation
dI/dt F = 60 Hz
IGM
PG(AV)
Tp = 20 µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
VDRM
VRRM
Tstg
Tj =125ºC
Operating junction temperature range
Tj
VALUE
4
2.5
30
33
4.5
50
1.2
0.2
600 and 800
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
V
ºC
www.nellsemi.com
Page 1 of 7
1 page  
SEMICONDUCTOR
4PT Series RRooHHSS
Fig.7 Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
dV/dt[RGK] / dV/dt[RGK=220Ω]
10.00
1.00
Tj=125°C
VD=0.67 X VDRM
0.10
0.01
0
RGK(KΩ)
200 400 600 800 1000 1200 1400 1600 1800 2000
Fig.9 Surge peak on-state current versus
number of ctcles
ITSM(A)
35
30
25
20
15
10
5
0
1
No n repe titive
Tj ini tal =2 5° C
Re pe titive
Tc=1 15 °C
Nu mb er of cycles
10 100
tp=1 0ms
One cycle
1000
Fig.8 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
dV/dt[CGK] / dV/dt[RGK=220Ω]
10
8 VD=0.67 X VDRM
Tj=125°C
6 RGK=220Ω
4
2
0 CGK(nF)
0 2 4 6 8 10 12 14 16 18 20 22
Fig.10 Non-repetitive surge peak on-state
current, and corresponding values
of l²t
ITSM(A),I²t(A²s)
300
dI /dt Iimitat ion
100
Tj ini tal =25 °C
ITSM
10
Si nusoi dal pul se wi th
wi dt h < 10ms
1
0.01
0.10
tp(ms)
1.00
I²t
10.00
Fig.11 On-state characteristics (maximum
values)
ITM(A)
50.0
Tjmax
10.0
Rd=90mΩ
Tt0=0.85V
Tj =max
1.0
Tj = 25°C
0.1
VTM(V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig.12 Thermal resistance junction to ambient
versus copper surface under tab (DPAK)
Rth(j-a)(°C/W)
100
80
Epoxy pr int ed ci rcui t boar d FR4
cop per thi ck nes s = 35µm
60
40
20
S (c m ²)
0
0 2 4 6 8 10 12 14 16 18 20
www.nellsemi.com
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 4PT.PDF ] | |
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