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PDF 1SV312 Data sheet ( Hoja de datos )
| Número de pieza | 1SV312 | |
| Descripción | DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1SV312 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TOSHIBA Diode Silicon Epitaxial Pin Type
1SV312
VHF~UHF Band RF Attenuator Applications
· Two independent diodes mounted onto a 4-pin ultra compact package
and it is suitable for high-density circuit design.
· Low capacitance: CT = 0.25 pF (typ.)
· Low series resistance: rs = 3 Ω (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
VR
IF
Tj
Tstg
Rating
50
50
125
-55~125
Unit
V
mA
°C
°C
1SV312
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Series resistance
Symbol
VR
IR
VF
CT
rs
Test Condition
IR = 10 mA
VR = 50 V
IF = 50 mA
VR = 50 V, f = 1 MHz
IF = 10 mA, f = 100 MHz
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-2U1A
Weight: 0.006 g (typ.)
Min Typ. Max Unit
50 ¾ ¾
¾ ¾ 0.1
¾ 0.95
1
¾ 0.25 0.4
¾3¾
V
mA
V
pF
W
1 2003-03-24
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1SV312.PDF ] | |
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