(PDF) 1SV323 Datasheet - TOSHIBA Diode Silicon Epitaxial Planar Type TCXO/VCO

Número de pieza	1SV323
Descripción	TOSHIBA Diode Silicon Epitaxial Planar Type TCXO/VCO
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TCXO/VCO TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 · High capacitance ratio: C1 V/C4 V = 4.3 (typ.) · Low series resistance: rs = 0.4 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C 1SV323 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C1 V C4 V C1 V/C4 V rs IR = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 4 V, f = 100 MHz Note: Signal level when capacitance is measured: Vsig = 500 mVrms Marking JEDEC ― JEITA ― TOSHIBA 1-1G1A Weight: 0.0014 g (typ.) Min Typ. Max Unit 10 ¾ ¾ V ¾ ¾ 3 nA 26.5 ¾ 29.5 pF 6.0 ¾ 7.1 pF 4.0 4.3 ¾ ¾ ¾ 0.4 0.8 W 1 2003-03-24 1 page

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PDF 1SV323 Data sheet ( Hoja de datos )