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Datasheet NX3P190-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


NX3 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NX3008CBKSMOSFET, Transistor

NX3008CBKS 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using
NXP Semiconductors
NXP Semiconductors
mosfet
2NX3008CBKVMOSFET, Transistor

SO T6 NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plas
NXP Semiconductors
NXP Semiconductors
mosfet
3NX3008NBKMOSFET, Transistor

SO T2 NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Rev. 1 — 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technolo
NXP Semiconductors
NXP Semiconductors
mosfet
4NX3008NBKMBMOSFET, Transistor

NX3008NBKMB 83B 30 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trenc
NXP Semiconductors
NXP Semiconductors
mosfet
5NX3008NBKS350mA dual N-channel Trench MOSFET

NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET t
NXP Semiconductors
NXP Semiconductors
mosfet
6NX3008NBKTMOSFET, Transistor

SO T4 16 NX3008NBKT 30 V, 350 mA N-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET techno
NXP Semiconductors
NXP Semiconductors
mosfet
7NX3008NBKVMOSFET, Transistor

SO T6 NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using
NXP Semiconductors
NXP Semiconductors
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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