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IPB240N03S4L-R8 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPB240N03S4L-R8
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPB240N03S4L-R8 fiche technique
IPB240N03S4L-R8
OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on)
ID
30 V
0.76 mW
240 A
PG-TO263-7-3
Type
IPB240N03S4L-R8
Package
PG-TO263-7-3
Marking
4N03LR8
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=120 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
240
240
960
945
190
±16
300
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2014-04-07

PagesPages 9
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