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IPU60R2K1CE fiches techniques PDF

Infineon Technologies - MOSFET ( Transistor )

Numéro de référence IPU60R2K1CE
Description MOSFET ( Transistor )
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPU60R2K1CE fiche technique
IPD60R2K1CE,IPU60R2K1CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAK
tab
12 3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
2100
m
Id. 3.7 A
Qg.typ
6.7
nC
ID,pulse
6
A
Eoss@400V
0.76
µJ
Type/OrderingCode
IPD60R2K1CE
IPU60R2K1CE
Package
PG-TO 252
PG-TO 251
Marking
60S2K1CE
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31

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