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Numéro de référence | IPS65R1K0CE | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
IPS65R1K0CE
MOSFET
650VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PCSilverbox,Adapters,LCD&PDPTVandindoorLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Id.typ
Qg.typ
ID,pulse
Eoss@400V
700
1000
7.2
15.3
12
1.5
V
mΩ
A
nC
A
µJ
Type/OrderingCode
IPS65R1K0CE
Package
PG-TO 251
Marking
65S1K0CE
IPAKSL
tab
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31
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Pages | Pages 14 | ||
Télécharger | [ IPS65R1K0CE ] |
No | Description détaillée | Fabricant |
IPS65R1K0CE | MOSFET ( Transistor ) | Infineon Technologies |
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