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Numéro de référence | UT6898 | ||
Description | N-CHANNEL ENHANCEMENT Power MOSFET | ||
Fabricant | Unisonic Technologies | ||
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1 Page
UNISONIC TECHNOLOGIES CO., LTD
UT6898
N-CHANNEL ENHANCEMENT
DESCRIPTION
The UT6898 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON)<18 mΩ @ VGS=4.5V, ID=9.4A
* RDS(ON)<14 mΩ @ VGS=2.5V, ID=8.3A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
(7) (8)
D1
(5) (6)
D2
(2) (4)
G1 G2
Power MOSFET
S1 S2
(1) (3)
ORDERING INFORMATION
Ordering Number
UT6898G-S08-R
Note: Pin Assignment: G: Gate
D: Drain
Package
SOP-8
S: Source
Pin Assignment
12345678
Packing
S G S G D D D D Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-239.B
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Pages | Pages 5 | ||
Télécharger | [ UT6898 ] |
No | Description détaillée | Fabricant |
UT6898 | N-CHANNEL ENHANCEMENT Power MOSFET | Unisonic Technologies |
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