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AVAGO - High Linearity Enhancement Mode Pseudomorphic HEMT

Numéro de référence ATF-511P8
Description High Linearity Enhancement Mode Pseudomorphic HEMT
Fabricant AVAGO 
Logo AVAGO 





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ATF-511P8 fiche technique
ATF-511P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’s ATF-511P8 is a single-voltage high
linearity, low noise E-pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a high linearity, low-noise, medium-
power amplifier. Its operating frequency range is from 50
MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices
are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
bias power.
Pin Connections and Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
1Px
Top View
Pin 7 (Drain)
Pin 6
Pin 5
Note:
Package marking provides orientation and identification:
“1P” = Device Code
“x” = Date code indicates the month of manufacture.
Features
Single voltage operation
High linearity and P1dB
Low noise figure
Excellent uniformity in product specifications
Small package size:
2.0 x 2.0 x 0.75 mm
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-reel packaging option available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
41.7 dBm output IP3
30 dBm output power at 1 dB gain compression
1.4 dB noise figure
14.8 dB gain
12.1 dB LFOM[4]
69% PAE
Applications
Front-end LNA Q2 and Q3 driver or pre-driver amplifier
for Cellular/PCS and WCDMA wireless infrastructure
Driver amplifier for WLAN, WLL/RLL and MMDS
applications
General purpose discrete E-pHEMT for other high
linearity applications

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