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AVAGO - High Linearity Enhancement Mode Pseudomorphic HEMT

Numéro de référence ATF-531P8
Description High Linearity Enhancement Mode Pseudomorphic HEMT
Fabricant AVAGO 
Logo AVAGO 





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ATF-531P8 fiche technique
ATF-531P8
High Linearity Enhancement Mode[1] ­Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] ­Package
Data Sheet
Description
Avago Technologies’ ­­ATF‑531P8 is a single-voltage high
linearity, low noise E‑pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a high linearity, low-noise, medium-
power amplifier. Its operating frequency range is from 50
MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices are
100% RF & DC tested.
Pin Connections and Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
3Px
Pin 7 (Drain)
Pin 6
Pin 4 (Source)
Top View
Pin 5
Note:
Package marking provides orientation and identification:
“3P” = Device Code
“x” = Date code indicates the month of manufacture.
Features
Single voltage operation
High linearity and gain
Low noise figure
Excellent uniformity in product specifications
Small package size:
2.0 x 2.0 x 0.75 mm
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-reel packaging option available
Specifications
2 GHz; 4V, 135 mA (Typ.)
38 dBm output IP3
0.6 dB noise figure
20 dB gain
10.7 dB LFOM[4]
24.5 dBm output power at 1 dB gain compression
Applications
Front-end LNA Q1 and Q2 driver or pre-driver ampli‑
fier for Cellular/PCS and WCDMA wireless infrastruc‑
ture
Driver amplifier for WLAN, WLL/RLL and MMDS ap‑
plications
General purpose discrete E-pHEMT for other high
linearity applications
Notes:
1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional
depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power.

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