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NXP Semiconductors - Silicon Carbide Diode

Numéro de référence NXPSC04650
Description Silicon Carbide Diode
Fabricant NXP Semiconductors 
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NXPSC04650 fiche technique
NXPSC04650
Silicon Carbide Diode
4 May 2015
Product data sheet
1. General description
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for
high frequency switched-mode power supplies.
2. Features and benefits
Highly stable switching performance
High forward surge capability IFSM
Extremely fast reverse recovery time
Superior in efficiency to Silicon Diode alternatives
Reduced losses in associated MOSFET
Reduced EMI
Reduced cooling requirements
RoHS compliant
3. Applications
Power factor correction
Telecom/Server SMPS
UPS
PV inverter
PC Silverbox
LED/OLED TV
Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Tmb ≤ 136 °C; square-wave
pulse; Fig. 1; Fig. 2
Tj junction temperature
Static characteristics
VF
forward voltage
IF = 4 A; Tj = 25 °C; Fig. 4
Min Typ Max Unit
- - 650 V
- - 4A
- - 175 °C
- 1.5 1.7 V
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