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Numéro de référence | NXPSC04650 | ||
Description | Silicon Carbide Diode | ||
Fabricant | NXP Semiconductors | ||
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NXPSC04650
Silicon Carbide Diode
4 May 2015
Product data sheet
1. General description
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for
high frequency switched-mode power supplies.
2. Features and benefits
• Highly stable switching performance
• High forward surge capability IFSM
• Extremely fast reverse recovery time
• Superior in efficiency to Silicon Diode alternatives
• Reduced losses in associated MOSFET
• Reduced EMI
• Reduced cooling requirements
• RoHS compliant
3. Applications
• Power factor correction
• Telecom/Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED/OLED TV
• Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Tmb ≤ 136 °C; square-wave
pulse; Fig. 1; Fig. 2
Tj junction temperature
Static characteristics
VF
forward voltage
IF = 4 A; Tj = 25 °C; Fig. 4
Min Typ Max Unit
- - 650 V
- - 4A
- - 175 °C
- 1.5 1.7 V
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Pages | Pages 9 | ||
Télécharger | [ NXPSC04650 ] |
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