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PDF BYV32G-200 Data sheet ( Hoja de datos )
| Número de pieza | BYV32G-200 | |
| Descripción | Dual ultrafast power diode | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BYV32G-200
Dual ultrafast power diode
Rev. 01 — 11 January 2011
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
VRRM
IO(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current
IFSM non-repetitive peak
forward current
IRRM
repetitive peak reverse
current
VESD
electrostatic discharge
voltage
Static characteristics
VF forward voltage
Conditions
square-wave pulse; δ = 0.5 ;
Tmb ≤ 115 °C; both diodes
conducting; see Figure 1;
see Figure 2
Tj(init) = 25 °C; tp = 10 ms;
sine-wave pulse; per diode
tp = 2 µs; δ = 0.001
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
IF = 8 A; Tj = 150 °C;
see Figure 4
Min Typ Max Unit
- - 200 V
- - 20 A
- - 125 A
- - 0.2 A
- - 8 kV
- 0.72 0.85 V
1 page  
NXP Semiconductors
BYV32G-200
Dual ultrafast power diode
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
Qr recovered charge
trr reverse recovery time
VFR forward recovery voltage
Conditions
IF = 20 A; Tj = 25 °C
IF = 8 A; Tj = 150 °C; see Figure 4
VR = 200 V; Tj = 100 °C
VR = 200 V; Tj = 25 °C
IF = 2 A; VR = 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
ramp recovery; Tj = 25 °C; see Figure 5
IF = 0.5 A; IR = 1 A; step recovery;
measured at reverse current = 0.25 A;
Tj = 25 °C; see Figure 6
IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C;
see Figure 7
Min Typ Max Unit
- 1 1.15 V
- 0.72 0.85 V
- 0.2 0.6 mA
- 6 30 µA
- 8 12.5 nC
- 20 25 ns
- 10 20 ns
- - 1V
32
IF
(A)
24
16
003aac981
(1) (2)
(3)
8
0
0 0.4 0.8 1.2 1.6
VF (V)
IF
dlF
dt
trr
Qr
IR IRM
time
25 %
100 %
003aac562
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
BYV32G-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Contact information. . . . . . . . . . . . . . . . . . . . . .10
BYV32G-200
Dual ultrafast power diode
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 January 2011
Document identifier: BYV32G-200
11 Page | ||
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