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Datasheet WFW9N70-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
WFW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | WFW10N80 | N-Channel MOSFET PROVISIONAL
Wisdom Semiconductor
WFW10N80
N-Channel MOSFET
Features
■ ■
RDS(on) (Max 1.05 Ω )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2. Drain
●
�  Wisdom technologies mosfet | | |
| 2 | WFW11N90 | N-Channel MOSFET Wisdom Semiconductor
WFW11N90
Features
■ RDS(on) (Max 1.1 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advan Wisdom technologies mosfet | | |
| 3 | WFW13N50 | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
13N5 0 WFW FW13N5 13N50
con N-Ch annel MOS FET Sili lic Cha OSF
Features
■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Tem  Winsemi mosfet | | |
| 4 | WFW18N50 | Silicon N-Channel MOSFET WFW18N50
Silicon N-Channel MOSFET
Features
18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
These N-Channel enhancement mode power field effect trans  WINSEMI SEMICONDUCTOR mosfet | | |
| 5 | WFW18N50N | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFW18N50N
Silicon N-Channel MOSFET
Features
■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
Genera Winsemi mosfet | | |
| 6 | WFW18N50W | Silicon N-Channel MOSFET Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFW18N50W
Silicon N-Channel MOSFET
Features
■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
Genera Winsemi mosfet | | |
| 7 | WFW20N50 | N-Channel MOSFET Wisdom Semiconductor
WFW20N50
N-Channel MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 0.26 Ω )@VGS=10V Gate Charge (Typical 90nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2. Drain
●
1. Gate {
▲
● ●  Wisdom mosfet | |
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