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PDF NTB30N06 Data sheet ( Hoja de datos )
| Número de pieza | NTB30N06 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTP30N06, NTB30N06
Power MOSFET
30 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
60
60
VGS
VGS
"20
"30
ID 27
ID 15
IDM 80
PD 88.2
0.59
Operating and Storage Temperature Range
TJ, Tstg –55 to
+175
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 0.3 mH
IL(pk) = 26 A, VDS = 60 Vdc)
EAS
101
Thermal Resistance
– Junction–to–Case
RθJC 1.7
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL 260
Unit
Vdc
Vdc
Vdc
Adc
Apk
W
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
30 AMPERES
60 VOLTS
RDS(on) = 42 mΩ
N–Channel
D
G
4
S
4
12
1
2
3
TO–220AB
CASE 221A
STYLE 5
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTx30N06
LLYWW
1
Gate
3
Source
NTx30N06
LLYWW
1
Gate
23
Drain Source
2
Drain
NTx30N06
x
LL
Y
WW
= Device Code
= P or B
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP30N06
NTB30N06
NTB30N06T4
TO–220AB
D2PAK
D2PAK
50 Units/Rail
50 Units/Rail
800/Tape & Reel
© Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 0
1
Publication Order Number:
NTP30N06/D
1 page  
1
D = 0.5
NTP30N06, NTB30N06
0.2
0.1
0.05
SINGLE PULSE
0.1
0.0001
0.01
0.001
P(pk)
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1
t2 TJ(pk) – TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2
0.01
t, TIME (s)
0.1
1
Figure 13. Thermal Response
10
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 14. Diode Reverse Recovery Waveform
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTB30N06.PDF ] | |
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