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PDF 3LN01C Data sheet ( Hoja de datos )
| Número de pieza | 3LN01C | |
| Descripción | N-Channel Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : EN6260C
3LN01C
N-Channel Small Signal MOSFET
30V, 0.15A, 3.7Ω, Single CP
http://onsemi.com
Features
• Low ON-resistance
• Ultrahigh-speed switching
• 2.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
30
±10
0.15
0.6
0.25
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-013
2.9 0.1 3LN01C-TB-E
3 3LN01C-TB-H
Ordering & Package Information
Device
Package
Shipping
3LN01C-TB-E
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
3LN01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
memo
Pb-Free
Pb-Free
and
Halogen Free
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
CP
Packing Type: TB
TB
Marking
YA
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6
1 page  
Outline Drawing
3LN01C-TB-E, 3LN01C-TB-H
3LN01C
Land Pattern Example
Mass (g) Unit
0.013
* For reference
mm
0.8
Unit: mm
0.95 0.95
No.6260-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 3LN01C.PDF ] | |
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