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C5032 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Panasonic - 2SC5032

شماره قطعه C5032
شرح مفصل 2SC5032
تولید کننده Panasonic 
آرم Panasonic 


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C5032 شرح
Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
500
500
400
7
6
3
1.2
30
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 500V, IE = 0
VEB = 5V, IC = 0
100 µA
100 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
400
V
Forward current transfer ratio
hFE1
hFE2
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
10
8 40
Collector to emitter saturation voltage VCE(sat)
IC = 1.5A, IB = 0.3A
1.0 V
Base to emitter saturation voltage VBE(sat)
IC = 1.5A, IB = 0.3A
1.5 V
Transition frequency
Turn-on time
Storage time
Fall time
fT VCE = 10V, IC = 0.2A, f = 1MHz
ton
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
tstg VCC = 200V
tf
10 MHz
1.0 µs
3.0 µs
0.3 µs
1

قانون اساسیصفحه 3
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