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PDF ME4410B Data sheet ( Hoja de datos )
| Número de pieza | ME4410B | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ME4410B (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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N-Channel 30-V (D-S) MOSFET
ME4410B/ME4410B-G
GENERAL DESCRIPTION
The ME4410B is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored
to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and
notebook computer power management and other battery
powered circuits where high-side switching , and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
FEATURES
● RDS(ON) ≦ 18 mΩ@VGS=10V
● RDS(ON) ≦ 30 mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load SwitchC
● LCD Display inverter
e Ordering Information: ME4410B (Pb-free)
ME4410B-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25℃
Current(Tj=150℃)*
TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation*
TA=25℃
TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
RθJA
*The device mounted on 1in2 FR4 board with 2 oz copper
Rating
30
±20
8.5
6.8
40
1.26
2.0
1.3
-55 to 150
60
Unit
V
V
A
A
A
W
℃
℃/W
Mar,2009-Ver1.1
01
1 page  
N-Channel 30-V (D-S) MOSFET
ME4410B/ME4410B-G
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
Mar,2009-Ver1.1
05
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ME4410B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ME4410 | N-Channel 30-V (D-S) MOSFET | Matsuki |
| ME4410A | N-Channel 30-V (D-S) MOSFET | Matsuki |
| ME4410B | N-Channel 30-V (D-S) MOSFET | Matsuki |
| ME4410B-G | N-Channel 30-V (D-S) MOSFET | Matsuki |
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