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FGB40N60SM Datasheet دیتاشیت PDF دانلود

دیتاشیت - Fairchild Semiconductor - Field Stop IGBT

شماره قطعه FGB40N60SM
شرح مفصل Field Stop IGBT
تولید کننده Fairchild Semiconductor 
آرم Fairchild Semiconductor 


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FGB40N60SM شرح
September 2013
FGB40N60SM
600 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
• IR Reflow Only
Applications
• Welder, PFC
General Description
Using novel field stop IGBT technology, Fairchild’s new series
of field stop 2nd generation IGBTs offer the optimum
performance for welder and PFC applications where low
conduction and switching losses are essential.
C
COLLECTOR
(FLANGE)
TO-263AB/D2-PAK
GE
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
± 20
± 30
80
40
120
349
174
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
W
W
oC
oC
oC
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
1
www.fairchildsemi.com

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