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PDF 5N60K-MT Data sheet ( Hoja de datos )
| Número de pieza | 5N60K-MT | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
5N60K-MT
5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N60K-MT is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* RDS(ON) < 2.2Ω @ VGS =10V, ID = 2.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N60KL-TF3-T
5N60KG-TF3-T
5N60KL-TF1-T
5N60KG-TF1-T
5N60KL-TF2-T
5N60KG-TF2-T
5N60KL-TF3T-T
5N60KG-TF3T-T
5N60KL-TM3-T
5N60KG-TM3-T
5N60KL-TMS-T
5N60KG-TMS-T
5N60KL-TN3-R
5N60KG-TN3-R
5N60KL-TND-R
5N60KG-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-038.B
1 page  
5N60K-MT
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R205-038.B
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 5N60K-MT.PDF ] | |
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