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IGC168T170S8RM fiches techniques PDF

Infineon - IGBT3 Power Chip

Numéro de référence IGC168T170S8RM
Description IGBT3 Power Chip
Fabricant Infineon 
Logo Infineon 





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IGC168T170S8RM fiche technique
IGC168T170S8RM
IGBT3 Power Chip
Features:
1700V Trench + Field stop technology
low switching losses
soft turn off
positive temperature coefficient
easy paralleling
This chip is used for:
power modules
Applications:
drives
Chip Type
VCE
IC
Die Size
IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2
C
G
E
Package
sawn on foil
Mechanical Parameters
Raster size
Emitter pad size (incl. gate pad)
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
13.38 x 12.58
11.159 x 10.353
1.674 x 0.899
mm2
168.3
190 µm
200 mm
150
Photoimide
3200 nm AlSiCu
Ni Ag system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7793O, L7793T, L7793E, Edition 0.9, 27.06.2014

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