(PDF) QS8M11 Datasheet - Power MOSFET ( Transistor )

Número de pieza	QS8M11
Descripción	Power MOSFET ( Transistor )
Fabricantes	Unisonic Technologies
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No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET DESCRIPTION The UTC QS8M11 uses UTC’s advanced technology to provide the customers with low voltage drive, etc. The UTC QS8M11 is suitable for switching. FEATURES * N-Channel: 30V, 3.5A RDS(ON) < 50mΩ @ VGS =10V RDS(ON) < 65mΩ @ VGS= 4.5V RDS(ON) < 70mΩ @ VGS= 4.0V * P-Channel: -30V, -3.0A RDS(ON) < 75mΩ @ VGS= -10V RDS(ON) < 115mΩ @ VGS= -4.5V RDS(ON) < 125mΩ @ VGS= -4.0V * Low voltage drive (4V drive) * Low on-resistance SYMBOL (7)(8) D1 (5)(6) D2 SOP-8 (2) (4) G1 G2 S1 N-Channel (1) S2 P-Channel (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package QS8M11L-S08-T QS8M11G-S08-T SOP-8 QS8M11L-S08-R QS8M11G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing S1 G1 S2 G2 D2 D2 D1 D1 Tube S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-B29.a 1 page QS8M11 Preliminary TEST CIRCUITS AND WAVEFORMS N-CHANNEL Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 VER.a 5 Page

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PDF QS8M11 Data sheet ( Hoja de datos )