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PDF STP22NM60FP Data sheet ( Hoja de datos )
| Número de pieza | STP22NM60FP | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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Hay una vista previa y un enlace de descarga de STP22NM60FP (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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STP22NM60 - STP22NM60FP
STB22NM60 - STB22NM60-1
N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK
MDmesh™Power MOSFET
ADVANCED DATA
TYPE
VDSS RDS(on) Rds(on)*Qg ID
STP22NM60
STP22NM60FP
STB22NM60
STB22NM60-1
600 V
600 V
600 V
600 V
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
7.6 Ω*nC
7.6 Ω*nC
7.6 Ω*nC
7.6 Ω*nC
22 A
22 A
22 A
22 A
s TYPICAL RDS(on) = 0.19Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE CHARGE
s LOW GATE INPUT RESISTANCE
DESCRIPTION
This improved version of MDmesh™ which is based
on Multiple Drain process represents the new bench-
mark in high voltage MOSFETs. The resulting product
exhibits even lower on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip technique
yields overall performances that are significantly better
than that of similar competition’s products.
3
2
1
TO-220
3
2
1
TO-220FP
123
I2PAK
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
Unit
STP(B)22NM60(-1) STP22NM60FP
600 V
600 V
±30 V
22
22 (*)
A
12.6
12.6 (*)
A
80
80(*)
A
192 45 W
1.2 0.36 W/°C
15 V/ns
--
2500
V
–65 to 150
°C
150 °C
(1)ISD ≤22A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
January 2003
1/10
1 page  
STP22NM60 / STP22NM60FP / STB22NM60 / STB22NM60-1
DIM.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
inch
TYP.
0.050
0.645
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP22NM60FP.PDF ] | |
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