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PDF 2SC2901 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2901 | |
| Descripción | NPN Silicon Epitaxial Planar Transistor | |
| Fabricantes | PACO | |
| Logotipo |  |
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ST 2SC2901
NPN Silicon Epitaxial Planar Transistor
for general purpose amplifier and high speed
switching applications.
The transistor is subdivided into two groups L and
K, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (10 µs pulse)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
Ptot
Tj
Tstg
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Value
40
40
15
5
200
500
600
150
- 55 to + 150
Unit
V
V
V
V
mA
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
DC Current Gain
at VCE = 1 V, IC = 10 mA
Current Gain Group
Collector Base Cutoff Current
at VCB = 20 V
Emitter Base Cutoff Current
at VEB = 3 V
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
Turn-on Time
at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -VBE = 1.5 V
Storage Time
at IC = 10 mA, IB1 = -IB2 = 10 mA
Turn-off Time
at VCC = 3 V, IC = 10 mA, IB1 = 3 mA, -IB2 = 1.5 mA
Gain Bandwidth Product
at VCE = 10 V, -IE = 10 mA, f = 100 MHz
Output Capacitance
at VCB = 5 V, f = 1 MHz
L
K
hFE
hFE
ICBO
IEBO
VCE(sat)
VBE(sat)
ton
tstg
toff
fT
Cob
Min.
40
100
-
-
-
-
-
-
-
500
-
Typ.
-
-
-
-
0.15
0.8
8
6
12
750
1.8
Max.
120
200
0.1
0.1
0.25
0.85
12
13
18
-
4
Unit
-
-
µA
µA
V
V
ns
ns
ns
MHz
pF
Dated : 07/08/2003
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC2901.PDF ] | |
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