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Número de pieza | KF8N60F | |
Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | KEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KF8N60F (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! SEMICONDUCTOR
TECHNICAL DATA
KF8N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=8A
Drain-Source ON Resistance :
RDS(ON)(Max)=1.05 @VGS=10V
Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KF8N60P KF8N60F
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
8 8*
5 5*
20 20*
230
14.7
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
154
1.23
50
0.4
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.81
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.5
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF8N60P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KF8N60F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
D
TO-220IS (1)
G
2008. 10. 2
S
Revision No : 1
1/7
1 page KF8N60P/F
Fig12. Transient Thermal Response Curve
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
Single Pulse
10-5 10-4
10-3 10-2
TIME (sec)
(KF8N60P)
PDM
t1
t2
- Rth(j-c) = 0.81 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
Fig13. Transient Thermal Response Curve
(KF8N60F)
100 Duty=0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
Single Pulse
10-5 10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Rth(j-c) = 2.5 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
2008. 10. 2
Revision No : 1
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet KF8N60F.PDF ] |
Número de pieza | Descripción | Fabricantes |
KF8N60F | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF8N60P | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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