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PDF KF80N08F Data sheet ( Hoja de datos )
| Número de pieza | KF80N08F | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KF80N08P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
It s mainly suitable for low voltage applications such as automotive,
DC/DC converters and a load switch in battery powered applications
FEATURES
VDSS= 75V, ID= 80A
Drain-Source ON Resistance :
RDS(ON)=10m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KF80N08P KF80N08F
Drain-Source Voltage
VDSS
75
Gate-Source Voltage
VGSS
20
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
80 56
76 39
320 224
1200
18
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
230
1.54
62.5
0.42
Maximum Junction Temperature
Tj
175
Storage Temperature Range
Tstg -55 175
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.65
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.4
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF80N08P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KF80N08F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
D
TO-220IS (1)
G
2008. 6. 19
S
Revision No : 0
1/7
1 page  
KF80N08P/F
2008. 6. 19
Revision No : 0
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KF80N08F.PDF ] | |
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