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PDF 2SK3703 Data sheet ( Hoja de datos )

Número de pieza 2SK3703
Descripción N-Channel Power MOSFET / Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! 2SK3703 Hoja de datos, Descripción, Manual

Ordering number : EN7681B
2SK3703
N-Channel Power MOSFET
60V, 30A, 26mΩ, TO-220F-3SG
http://onsemi.com
Features
ON-resistance RDS(on)1=20mΩ (typ.)
4V drive
Input capacitance Ciss=1780pF (typ.)
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=20V, L=200μH, IAV=30A (Fig.1)
*2 L200μH, Single pulse
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
60
±20
30
120
2.0
25
150
--55 to +150
135
30
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7529-001
10.16
3.18
4.7
2.54
2SK3703-1E
Product & Package Information
• Package
: TO-220F-3SG
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
2
A
1.47 MAX
0.8
123
2.54 2.54
2.76
DETAIL-A
(0.84)
0.5 1 : Gate
FRAME 2 : Drain
EMC 3 : Source
TO-220F-3SG
K3703
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM TC-00002747/72506QA MSIM TC-00000067/61504 TSIM TA-100813 No.7681-1/7

1 page




2SK3703 pdf
Magazine Specication
2SK3703-1E
2SK3703
No.7681-5/7

5 Page










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