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2SK3746 fiches techniques PDF

ON Semiconductor - N-Channel Power MOSFET / Transistor

Numéro de référence 2SK3746
Description N-Channel Power MOSFET / Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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2SK3746 fiche technique
Ordering number : EN8283A
2SK3746
N-Channel Power MOSFET
1500V, 2A, 13Ω, TO-3P-3L
http://onsemi.com
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching
High reliability (Adoption of HVP process)
Avalanche resistance guarantee
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L20mH, single pulse
Tch
Tstg
EAS
IAV
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
1500
±20
2
4
2.5
110
150
--55 to +150
41
2
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7539-002
15.6 4.8
1.5
2SK3746-1E
3.2 7.0
2.0
3.0
1.0
123
5.45 5.45
13.6
0.6
1 : Gate
2 : Drain
3 : Source
TO-3P-3L
Product & Package Information
• Package
: TO-3P-3L
• JEITA, JEDEC : SC-65, TO-247, SOT-199
• Minimum Packing Quantity : 30 pcs./magazine
Marking
Electrical Connection
K3746
LOT No.
2
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002762/62005QB MSIM TB-00001345 No.8283-1/7

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