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2SK3747 fiches techniques PDF

ON Semiconductor - N-Channel Power MOSFET / Transistor

Numéro de référence 2SK3747
Description N-Channel Power MOSFET / Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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2SK3747 fiche technique
Ordering number : EN7767B
2SK3747
N-Channel Power MOSFET
1500V, 2A, 13Ω, TO-3PF-3L
http://onsemi.com
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching
High reliability (Adoption of HVP process)
Attachment workability is good by Mica-less package
Avalanche resistance guarantee
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
EAS
IAV
Note :*1 VDD=50V, L=20mH, IAV=2A (Fig.1)
*2 L20mH, single pulse
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
1500
±35
2
4
3.0
50
150
--55 to +150
41
2
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7538A-002
15.5
3.6
5.5 2SK3747-1E
3.0
Product & Package Information
• Package
: TO-3PF-3L
• JEITA, JEDEC
: SC-94
• Minimum Packing Quantity : 30 pcs./magazine
Marking
Electrical Connection
2
2.0
2.0
4.0
0.75
123
5.45 5.45
2.0
0.9
1 : Gate
2 : Drain
3 : Source
TO-3PF-3L
K3747
LOT No.
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002763/62005QB MSIM TB-00001301 / 81004QB TSIM TB-00000018 No.7767-1/7

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