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PDF 2SK3820 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3820 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : EN8147A
2SK3820
N-Channel Power MOSFET
100V, 26A, 60mΩ, TO-263-2L
http://onsemi.com
Features
• ON-resistance RDS(on)1=45mΩ(typ.)
• Input capacitance Ciss=2150pF (typ.)
• 4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=20V, L=200μH, IAV=26A (Fig.1)
*2 L≤200μH, single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
100
±20
26
104
1.65
50
150
--55 to +150
84.5
26
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7535-001
Ordering & Package Information
Device
Package
Shipping
2SK3820-DL-1E
TO-263-2L
(SC-83, TO-263)
800pcs./reel
memo
Pb Free
2SK3820-DL-1E
10.0 4.5
8.0
Packing Type: DL
Marking
1.3
4
K3820
1 23
2.54
1.27
0.8
2.54
0.254
5.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
DL
Electrical Connection
2, 4
LOT No.
1
TO-263-2L
3
Semiconductor Components Industries, LLC, 2013
June, 2013
61913 TKIM TC-00002869/61005QA MSIM TB-00000899 No.8147-1/6
1 page  
Outline Drawing
2SK3820-DL-1E
2SK3820
Land Pattern Example
Mass (g) Unit
1.5
* For reference
mm
Unit: mm
No.8147-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3820.PDF ] | |
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