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Número de pieza | NCE01H29TC | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | NCE Power Semiconductor | |
Logotipo | ||
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Pb Free Product
NCE01H29TC
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H29TC uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in a wide variety of other applications.
General Features
● VDSS =100V,ID =290A
RDS(ON) < 3.2mΩ @ VGS=10V (Typ:2.7mΩ)
● Good stability and uniformity with high EAS
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Schematic diagram
Application
● DC motor drive
● High efficiency synchronous rectification in SMPS
● Uninterruptible power supply
● High speed power switching
● Hard switched and high frequency circuits
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01H29TC
NCE01H29TC
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
290
200
1120
460
3.07
3500
10
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page http://www.ncepower.com
Pb Free Product
NCE01H29TC
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NCE01H29TC.PDF ] |
Número de pieza | Descripción | Fabricantes |
NCE01H29T | NCE N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
NCE01H29TC | N-Channel Enhancement Mode Power MOSFET | NCE Power Semiconductor |
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