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NCE Power Semiconductor - N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE75H21D
Description N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE75H21D fiche technique
http://www.ncepower.com
Pb Free Product
NCE75H21D
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H21D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
General Features
VDSS =75V,ID =210A
RDS(ON) < 4m@ VGS=10V
Good stability and uniformity with high EAS
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Schematic diagram
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H21D
NCE75H21D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID (100)
IDM
PD
Single pulse avalanche energy (Note 4)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
Limit
75
±20
210
150
840
330
2.2
2200
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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